Электронная библиотека (репозиторий) Томского государственного университета
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Single element 2D materials and methods of their epitaxial synthesis 627 762 148
Analysis of the 7x7 to 5x5 superstructure transition by RHEED in the synthesis of Ge on Si (111) in an MBE installation 675 834 169
Two-dimensional materials of group IVA: Latest advances in epitaxial methods of growth 637 636 0
Microstructure and properties of a silicon coating deposited on a titanium nickelide substrate using molecular-beam epitaxy equipment 538 602 70
Interaction between islands in kinetic models of epitaxial growth of quantum dots 1729 1720 1
Single‑photon avalanche diode detectors based on group IV materials 1963 1961 2
High-resolution RHEED analysis of dynamics of low-temperature superstructure transitions in Ge/Si(001) epitaxial system 393 392 2
Kinetics of epitaxial formation of nanostructures by Frank-van der Merwe, Volmer-Weber and Stranski-Krastanow growth modes 705 1079 434
Peculiarities of the 7 × 7 to 5 × 5 superstructure transition during epitaxial growth of germanium on silicon (111) surface 472 464 1
Growth of germanium quantum dots on oxidized silicon surface 1340 1558 237
Unipolar barrier structures based on HgCdTe for infrared detection 4217 4265 108
Single-element 2D materials beyond graphene: methods of epitaxial synthesis 1471 1584 123
Single-photon avalanche diode detectors based on group IV nanostructures 796 950 173
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Dirko, Vladimir V.

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Dirko, Vladimir V.

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